View SGM2014AN_113990.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SGM2014AN
GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office.
Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers. Features * Ultra small package * Low voltage operation * Low noise: NF = 1.5dB (typ.) at 900MHz * High gain: Ga = 18dB (typ.) at 900MHz * Low cross-modulation * High stability * Built-in gate-protection diode Application UHF band amplifier, mixer and oscillator Structure GaAs N-channel dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratings (Ta = 25C) * Drain to source voltage VDSX 12 * Gate 1 to source voltage VG1S -5 * Gate 2 to source voltage VG2S -5 * Drain current ID 55 * Allowable power dissipation PD 100 * Channel temperature Tch 125 * Storage temperature Tstg -55 to +150 M-281
V V V mA mW C C
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
-1-
E97938-PS
SGM2014AN
Electrical Characteristics Item Drain cut-off current Symbol IDSX Condition Min. Typ. VDS = 12V VG1S = -4V VG2S = 0V VG1S = -4.5V IG1SS VG2S = 0V VDS = 0V VG2S = -4.5V IG2SS VG1S = 0V VDS = 0V VDS = 5V IDSS VG1S = 0V VG2S = 0V VDS = 5V VG1S (OFF) ID = 100A VG2S = 0V VDS = 5V VG2S (OFF) ID = 100A VG1S = 0V VDS = 5V ID = 10mA gm VG2S =1.5V f = 1kHz VDS = 5V Ciss ID = 10mA VG2S = 1.5V Crss f = 1MHz VDS = 5V NF ID = 10mA VG2S = 1.5V Ga f = 900MHz
(Ta = 25C) Max. 50 unit A
Gate 1 to source current
-8
A
Gate 2 to source current
-8
A
Drain saturation current
8
28
mA
Gate 1 to source cut-off voltage
-2.5
V
Gate 2 to source cut-off voltage
-2.5
V
Forward transfer admittance Input capacitance Feedback capacitance Noise figure Associated gain
13
17 0.9 25 1.5 2 50 2.5
ms pF fF dB dB
15
18
Typical Characteristics (Ta = 25C)
ID vs. VDS
40 (VG2S = 1.5V) 20 25 (VDS = 5V)
ID vs. VG1S
VG2S = 1.5V 1.0V 0.5V 0V
ID - Drain current [mA]
VG1S = 0V 20 -0.3V -0.6V 10 -0.9V -1.2V 0 0 1 2 3 4 5 VDS - Drain to source voltage [V] 6 -1.5V
ID - Drain current [mA]
30
15 -0.5V 10 -1.0V 5 -1.5V 0 -2.0 -1.5 -1.0 -0.5 VG1S - Gate 1 to source voltage [V] 0
-2-
SGM2014AN
ID vs. VG2S
25 (VDS = 5V) 25 (VDS = 5V)
gm vs. VG1S
gm - Forward transfer admittance [ms]
20
ID - Drain current [mA]
VG1S = 0V -0.2V -0.4V -0.6V
20
VG2S = 1.5V
15
15 1.0V 10 0.5V 5 0V -0.5V -1.0V -1.5 -1.0 -0.5 VG1S - Gate 1 to source voltage [V] 0
10
-0.8V -1.0V
5
-1.2V -1.4V
0 -2.0
-1.5 -1.0 -0.5 VG2S - Gate 2 to source voltage [V]
0
0 -2.0
NF vs. VG1S
6 (VDS = 5V, f = 900MHz) 5 VG2S = 0.5V 20 25
Ga vs. VG1S
(VDS = 5V, f = 900MHz)
VG2S = 1.5V
NF - Noise figure [dB]
Ga - Gain [dB]
4 1.0V
15 1.0V 10 0.5V 5
3
2
1.5V
1
0 -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 VG1S - Gate 1 to source voltage [V]
0.2
0 -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 VG1S - Gate 1 to source voltage [V]
0.2
NF, Ga vs. ID
3.0 (VDS = 5V, VG2S = 1.5V, f = 900MHz) 2.5 25 Ga 30 3.0
NF, Ga vs. f
30 (VDS = 5V, VG2S = 1.5V, ID = 10mA)
NFmin - Minimum noise figure [dB]
2.5 Ga
25
NF - Noise figure [dB]
Ga - Gain [dB]
1.5 NF 1.0
15
1.5
15
10
1.0 NFmin 0.5
10
0.5
5
5
0 0 2 4 6 8 10 12 14 16 18 20 22 ID - Drain current [mA]
0
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 f - Frequency [GHz]
0
-3-
Ga - Gain [dB]
2.0
20
2.0
20
SGM2014AN
S-parameter vs. Frequency Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA) f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 S11 MAG 0.999 0.997 0.991 0.981 0.968 0.956 0.944 0.929 0.917 0.898 0.877 0.855 0.831 0.809 0.785 0.762 0.737 0.721 0.685 0.655 ANG -2.8 -5.9 -9.0 -12.3 -15.5 -18.9 -21.8 -24.7 -27.4 -30.4 -32.8 -35.4 -38.0 -40.8 -43.3 -45.8 -48.2 -50.5 -52.7 -54.5 MAG 1.531 1.527 1.526 1.520 1.506 1.497 1.486 1.478 1.468 1.454 1.440 1.422 1.412 1.399 1.387 1.366 1.349 1.333 1.316 1.298 S21 ANG 175.1 170.2 165.4 160.3 155.6 150.7 146.1 141.5 136.7 131.8 127.4 122.8 118.4 113.8 109.3 104.6 100.3 95.8 91.5 87.2 MAG 0.001 0.003 0.003 0.005 0.006 0.008 0.008 0.009 0.010 0.011 0.012 0.012 0.013 0.013 0.013 0.013 0.013 0.013 0.013 0.013 S12 ANG 87.1 78.7 81.9 82.0 78.7 83.6 83.0 77.8 77.2 79.9 81.0 78.3 76.9 76.6 74.7 76.7 76.4 80.2 79.8 83.2 MAG 0.979 0.979 0.975 0.974 0.970 0.969 0.968 0.967 0.967 0.967 0.962 0.959 0.956 0.955 0.952 0.950 0.950 0.950 0.949 0.945
(Z0 = 50) S22 ANG -1.9 -4.0 -6.1 -8.2 -10.2 -12.1 -14.2 -16.3 -18.2 -20.3 -22.3 -24.4 -26.5 -28.9 -31.4 -33.9 -36.9 -39.5 -42.4 -45.0
Noise Figure Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA) f (MHz) 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 NFmin (dB) 0.76 0.88 0.99 1.11 1.23 1.34 1.45 1.54 1.62 1.71 1.80 1.90 1.99 2.09 2.18 2.26 2.34 2.42 2.50 Gamma Optimum ANG 0.94 0.91 0.88 0.86 0.83 0.81 0.79 0.77 0.75 0.73 0.71 0.69 0.67 0.65 0.63 0.61 0.59 0.56 0.54 MAG 5.8 8.4 11.0 13.4 15.6 17.8 19.9 22.0 24.0 25.9 27.8 29.7 31.6 33.5 35.5 37.5 39.5 41.6 43.8 Rn () 59.7 59.6 59.4 59.1 58.8 58.4 58.0 57.4 56.8 56.2 55.4 54.6 53.8 52.8 51.8 50.7 49.6 48.3 47.0
-4-
SGM2014AN
Package Outline
Unit: mm
M-281
2.0 0.2 1.3
3
2
1.25 0.1
0.425
(0.65)
(0.65)
0.9 0.1
4
1
2.1 0.2
0 0.1
+ 0.1 0.3 - 0.05 (0.65) (0.6)
+ 0.1 0.4 - 0.05
+ 0.1 0.1 - 0.01
1.25
1 : Source 2 : Gate 1 3 : Gate 2 4 : Drain
PACKAGE MATERIAL SONY CODE EIAJ CODE JEDEC CODE M-281 LEAD TREATMENT LEAD MATERIAL PACKAGE WEIGHT
EPOXY RESIN SOLDER PLATING COPPER 0.1g
-5-

▲Up To Search▲

Price & Availability of SGM2014AN

	To Download SGM2014AN Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .